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氮化镓(GaN)外延片
润新微电子提供具有更高性价比、稳定可靠的氮化镓产品,致力于推动电能转换革命!
■ 控制生长条件实现优异的二维电子气
■ 利用特有的缓冲层生长技术实现高击穿电压和极低漏电流
■ 原位氮化硅沉积提供了优良的动态性能,提高器件可靠性
■ 控制生长条件实现的高均匀性和重复性
0755-83048021
Key Features:
● High Vertical Breakdown Voltage: >1000V
● Low Leakage Current @Sub. Ground:<0.1uA/mm2@600V
● Bow X/Y: +/-45um
Typical Applications:
● 650V HEMTs
● 650V Diodes
Parameters | Measurements |
Substrate | 6” 1mm <111> p-type Si |
Epi ThickAvg | ~5um |
Epi ThickUnif | <2% |
Bow | +/-45um |
Cracking | <5mm |
Vertical BV | >1000V |
HEMT Al% | 25-35% |
HEMT ThickAvg | 20-30nm |
Insitu SiN Cap | 5-60nm |
2DEG conc. | ~1013cm-2 |
Mobility | ~2000cm2/Vs (<2%) |
Rsh | <330ohm/sq (<2%) |
400-6988-056